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Wednesday, May 20, 2020 | History

1 edition of Materials science and technology for nonvolatile memories found in the catalog.

Materials science and technology for nonvolatile memories

Dirk J. Wouters

Materials science and technology for nonvolatile memories

symposium held March 24-27, 2008, San Francisco, California, U.S.A.

by Dirk J. Wouters

  • 231 Want to read
  • 21 Currently reading

Published by Materials Research Soc in Warrendale, Pa .
Written in English

    Subjects:
  • Semiconductor storage devices,
  • Materials,
  • Congresses,
  • Electronics,
  • Integrated circuits

  • Edition Notes

    Includes bibliographical references and indexes.

    Statementeditors, Dirk J. Wouters, ... [et al.].
    SeriesMaterials Research Society symposium proceedings -- v.1071, Materials Research Society symposia proceedings -- v.1071.
    ContributionsMaterials Research Society. Meeting Symposium A., Symposium on Materials Science and Technology for Nonvolatile memories (4th : 2008 : San Francisco, Calif.)
    Classifications
    LC ClassificationsTK7895.M4 M3648 2008
    The Physical Object
    Paginationxiii, 221 p. :
    Number of Pages221
    ID Numbers
    Open LibraryOL25341053M
    ISBN 101605110418
    ISBN 109781605110417
    LC Control Number2012360772
    OCLC/WorldCa244560645

    Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new . About AVS: Science & Technology of Materials, Interfaces, and Processing. As an interdisciplinary, professional Society, AVS supports networking among academic, industrial, government, and consulting professionals involved in a variety of disciplines - chemistry, physics, biology, mathematics, all engineering disciplines, business, sales, etc. through common interests related to the basic.

      Free Online Library: Polythiophene-based materials for nonvolatile polymeric memory devices.(Report) by "Polymer Engineering and Science"; Engineering and manufacturing Science and technology, general Alkyl groups Electric properties Technology application Block copolymers Computer memory Materials Production processes Memory (Computers) Polymer composites . Resistive switching (RS) can be divided into two categories, namely nonvolatile memory switching and volatile threshold switching, depending on the volatility. MoO3 is one type of versatile transition metal oxide with a high work function, large electron affinity and wide band gap for potential applications.

      Light irradiation-controlled nonvolatile charge memory. Left: schematic of the memory device. Right: the optical-controlled writing and erasing process of source-drain current. (Courtesy: Q Li et al J. Phys. D: Appl. Phys. //ab) Topics: Applied Physics, Device Physics, Electrical Engineering, Materials Science, Nanotechnology Qinliang Li, Cailei Yuan and Ting Yu from. Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories Article in Materials Science and Engineering R Reports 32(6) April with.


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Materials science and technology for nonvolatile memories by Dirk J. Wouters Download PDF EPUB FB2

This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and : Paperback.

This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key.

Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Nonvolatile Memories is a two-volume book containing 32 state-of-the-art chapters written by 71 world-leading experts on nonvolatile memories.

It includes comprehensive coverage of the physics, material science, device engineering, and applications of nonvolatile memory devices. Get this from a library.

Materials science and technology for nonvolatile memories: symposium held March, San Francisco, California, U.S.A. [Dirk J Wouters;]. The development of the semiconductor industry through the CMOS technology has been possible thanks to the unique properties of the silicon and silicon dioxide material.

Nevertheless the continuous scaling of the device dimension and the increase of the integration level, i.e. the capability to follow for more than 20 years the so-called Moore’s law, has been enabled not only by the Si-SiO2 Cited by: 2.

Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.

This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Nonvolatile memories (NVMs) are making inroads into high‐capacity storage to replace Materials science and technology for nonvolatile memories book disk drives, fuelling the expansion of the global storage memory market.

As silicon‐based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being by:   Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization.

Other materials science issues are related to the stability and ageing of the amorphous state of by:   A second product for dual in-line memory module based on 3D Xpoint technology should also be commercialized in the future.

This memory is a transistor NVM with no transistor under the resistive element, but since the press release, it has been common belief that it is actually based on a phase-change material (PCM) by: This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering.

In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering.

In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic : Woodhead Publishing.

Free Online Library: Materials and physics for nonvolatile memories; proceedings.(Brief article, Book review) by "SciTech Book News"; Publishing industry Library and information science Science and technology, general Books Book reviews.

Nonvolatile Memory Technologies with Emphasis on Flash seamlessly gathers together information on the complex group of technologies that make up nonvolatile memory into one well-organized book.

While providing a detailed view of state-of-the-art mainline technologies that are currently being produced in high volume, it also explores less. Materials Science and Technology ( - current) Incorporates.

Metal Science ( - ) Metals Technology ( - ) Browse the list of issues and latest articles from Materials Science and Technology. List of issues Latest articles Partial Access; Volume 36 Volume 35.

Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering.

It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials. The high dielectric permittivities of perovskite-type materials can be advantageously used in dynamic random access memories (DRAM) [1], while the large values of switchable remanent polarization of ferroelectric materials are suitable for nonvolatile ferroelectric random access memories (FeRAM) [2–16].Cited by: 2.

We present in this article a review of the status of thin film ferroelectric materials for nonvolatile memories. Key materials issues relevant to the integration of these materials on Si wafers are discussed. The effect of film microstructure and electrode defect chemistry on the ferroelectric properties relevant to a high density nonvolatile memory technology are by: MATERIALS RESEARCH SOCIETY SYMPOSIUMPROCEEDINGSVOLUME New Functional Materials and Emerging Device Architectures for Nonvolatile Memories Symposium held April 25–29,San Francisco, California, U.S.A.

Yang Yang, Liping Ma, Jianyong Ouyang, Jun He, Hai Ming Liem, Chih-Wei Chu and Ankita Prakash, “Organic Nonvolatile Memories” in chapter 2 of book Materials for Information Technology (Editors.

Zschech, C. Whelan, T. Mikolajick), Springer-Verlag,p Full Publications. Teaching. MLE, Thermodynamics and kinetics of Materials. Transparent, Flexible, Fatigue-Free, Optical-Read, and Nonvolatile Ferroelectric Memories. Huan Gao. Huan Gao. School of Materials Science and Engineering, Nanjing University of Science and Technology, NanjingChina.

More by Huan Gao. Yuxi by: 1. Review of the Science and Technology for Low- and High-Density Nonvolatile Ferroelectric Memories. polarization of ferroelectric materials are suitable for nonvolatile ferroelectric random.This book provides readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices.

The second edition presents new advances of the ferroelectric FETs employing HfO2-based ferroelectric gate insulators.A novel nonvolatile rewritable memory device based on the soluble poly(N-vinylcarbazole)-chemically modified MoS 2 nanosheets (MoS 2-PVK) was fabricated with the configuration of Au/MoS 2-PVK/ is the first example of polymer covalently modified MoS 2 nanosheet-based memory devices.

As expected, this device exhibited a typical storage performance of nonvolatile rewritable memory.